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U.S. Department of Energy
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Transistors for Electric Motor Drives: High-Performance GaN HEMT Modules for Agile Power Electronics

Program Document ·
OSTI ID:1046759

ADEPT Project: Transphorm is developing transistors with gallium nitride (GaN) semiconductors that could be used to make cost-effective, high-performance power converters for a variety of applications, including electric motor drives which transmit power to a motor. A transistor acts like a switch, controlling the electrical energy that flows around an electrical circuit. Most transistors today use low-cost silicon semiconductors to conduct electrical energy, but silicon transistors don’t operate efficiently at high speeds and voltage levels. Transphorm is using GaN as a semiconductor material in its transistors because GaN performs better at higher voltages and frequencies, and it is more energy efficient than straight silicon. However, Transphorm is using inexpensive silicon as a base to help keep costs low. The company is also packaging its transistors with other electrical components that can operate quickly and efficiently at high power levels—increasing the overall efficiency of both the transistor and the entire motor drive.

Research Organization:
Transphorm
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI ID:
1046759
Country of Publication:
United States
Language:
English

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