Study of Charge Transport Mechanisms in ZnO-ZnTe Nanojunctions

Journal Article · Fri Jan 01 04:00:00 EST 2010 · HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XII

OSTI ID:1044700

Xu, Jun ^[1]; Lee, Sang Hyun ^[1]; Bell, Zane W ^[1]; Smith, Barton ^[1]; Zhang, Xiaoguang ^[1]; Ju, Tong ^[1]; Pan, Zhengwei ^[2]

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1. ORNL
2. University of Georgia, Athens, GA

Improved carrier transport is crucial for enhancing the performance of semiconductor devices such as radiation detectors. Conventionally, semiconductor devices employ planar p-n junctions in which carrier loss occurs mostly in the p-type and n-type diffusion regions. In a nanoscale three-dimensional (3-D) junction, the carriers can be efficiently collected cross the nanostructure by electric field distribution without trapping in the p-n regions. In addition, a nanocone junction should further improve carrier transport properties because this structure can be tailored to be completely depleted. In this work, we studied carrier transport mechanisms in nanojunctions made of vertically aligned ZnO nanostructures and ZnTe matrix using theoretical and experimental methods.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1044700
• Journal Information: HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XII, Journal Name: HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XII Journal Issue: 0 Vol. 0; ISSN 0277-786X; ISSN PSISDG
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE TRANSPORT
DIFFUSION
DISTRIBUTION
ELECTRIC FIELDS
NANOSTRUCTURES
NEUTRON DETECTORS
P-N JUNCTIONS
PERFORMANCE
PHYSICS
RADIATION DETECTORS
SEMICONDUCTOR DEVICES
TRANSPORT
TRAPPING