Phase Formation and Texture of Nickel Silicides on Si1-xCx Epilayers

Journal Article · Sat Dec 31 04:00:00 EST 2011 · Microelectronic Engineering

DOI:https://doi.org/10.1016/j.mee.2010.06.010· OSTI ID:1042176

Keyser, K De; Schutter, B De; Detavernier, C; Machkaoutsan, V; Bauer, M; Thomas, S; Sweet, J Jordan; Lavoie, C

We investigated the phase formation and texture of nickel silicides formed during the reaction of 10 nm sputter deposited nickel with Si1-xCx epitaxial layers on Si(1 0 0) substrates, having a carbon content between 0 and 2.5 atomic percent. It was found that both the formation temperature as well as the texture of the metal-rich phases is influenced by the amount of carbon in the Si1-xCx layer. To determine the influence of the location of the carbon during the silicidation process we also investigated the reaction of 10 nm nickel on Si(1 0 0) substrates, where carbon was either alloyed in the nickel layer or deposited as an interlayer at the interface between the nickel and the substrate. Depending on the location of the carbon, a different thermal stability of the layer was found.

• Research Organization: BROOKHAVEN NATIONAL LABORATORY (BNL)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1042176
• Report Number(s): BNL--97854-2012-JA
• Journal Information: Microelectronic Engineering, Journal Name: Microelectronic Engineering Journal Issue: 5 Vol. 88; ISSN 0167-9317
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
NICKEL
NICKEL SILICIDES
STABILITY
SUBSTRATES
TEXTURE