The Crystallization Behavior of Stochiometric and Off-stochiometric Ga-Sb-Te Materials for Phase-Change Memory
The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} and Ga-Sb materials were systematically studied. The alloy Ga{sub 4}Sb{sub 6}Te{sub 3} shows a fast crystallization speed, very high crystallization temperature, T{sub x}, and high electrical contrast. Although stoichiometric GaSb has similar performance and even faster crystallization speed, the electrical contrast is much lower. The other off-stoichiometric compounds we studied all have higher T{sub x} than Ge{sub 2}Sb{sub 2}Te{sub 5} indicating a good amorphous stability. By raising the Sb/Te ratio with GaSb incorporation, T{sub x} and the recrystallization time of melt-quenched, amorphous samples can be effectively increased. The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} with less likelihood of phase-segregation compared to nonstoichiometric compounds is a promising candidate for phase-change memory.
- Research Organization:
- BROOKHAVEN NATIONAL LABORATORY (BNL)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 1041793
- Report Number(s):
- BNL--97471-2012-JA
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 98; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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