Selective Area Control of Self-Assembled Pattern Architecture Using a Lithographically Patternable Block Copolymer

Journal Article · Wed Jul 01 04:00:00 EDT 2009 · ACS Nano

OSTI ID:1041489

Black, C T; Bosworth, J K; Obert, C K

We leverage distinctive chemical properties of the diblock copolymer poly({alpha}-methylstyrene)-block-poly(4-hydroxystyrene) to create for the first time high-resolution selective-area regions of two different block copolymer phase morphologies. Exposure of thin films of poly({alpha}-methylstyrene)-block-poly(4-hydroxystyrene) to nonselective or block-selective solvent vapors results in polymer phase separation and self-assembly of patterns of cylindrical-phase or kinetically trapped spherical-phases, respectively. Poly(4-hydroxystyrene) acts as a high-resolution negative-tone photoresist in the presence of small amounts of a photoacid generator and cross-linker, undergoing radiation-induced cross-linking upon exposure to ultraviolet light or an electron beam. We use lithographic exposure to lock one self-assembled phase morphology in specific sample areas as small as 100 nm in width prior to film exposure to a subsequent solvent vapor to form a second self-assembled morphology in unexposed wafer areas.

• Research Organization: BROOKHAVEN NATIONAL LABORATORY (BNL)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1041489
• Report Number(s): BNL--91304-2010-JA
• Journal Information: ACS Nano, Journal Name: ACS Nano Journal Issue: 7 Vol. 3; ISSN 1936-0851
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
ARCHITECTURE
CHEMICAL PROPERTIES
COPOLYMERS
CROSS-LINKING
ELECTRON BEAMS
MORPHOLOGY
POLYMERS
SOLVENTS
THIN FILMS
block copolymer
photoresist
self-assembly
solvent annealing