DISLOCATION VS. PRODUCTION BIAS REVISITED WITH ACCOUNTED OF RADIATION-INDUCED EMISSION BIAS: VOID SWELLING UNDER ELECTRON AND LIGHT ION IRRADIATION

Book · Sun Apr 17 04:00:00 EDT 2011

OSTI ID:1040983

Dubinko, Volodymyr; Hu, Shenyang Y; Li, Yulan; Henager, Charles H; Kurtz, Richard J

Extended abstract based on a manuscript submitted to Philosophical Magazine and Philosophical Magazine Letters for publication [1]. The preferential attraction to sinks of self-interstitial atoms (SIAs) over that of vacancies is the fundamental cause of the void swelling, and ultimately the evolution of microstructure in irradiated material. This preferential attraction is described mathematically in terms of bias factors that can be evaluated by solving diffusion equations for point defects (PDs) with drift terms included. The dislocation bias deduced from theory can be on the order of 0.5-1 (increasing with increasing sink strength) in a marked contrast with phenomenological values of 0.01-0.005 assumed in the early rate theory models in attempt to explain experimentally observed swelling rates [2]. Later this became one of the reasons that prompted the development of models based on production bias (PBM) as the main driver for swelling, which assumed that the dislocation bias was much lower than that predicted by theory. However, the PBM in its present form fails to account for important and common observations: the indefinite void growth often observed under cascade irradiation and the swelling saturation observed under high dose irradiation and in void lattices.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1040983
• Report Number(s): PNNL-SA-86036; AT6020100
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
ATOMS
DIFFUSION EQUATIONS
DISLOCATIONS
ELECTRONS
IRRADIATION
LIGHT IONS
MICROSTRUCTURE
POINT DEFECTS
PRODUCTION
SATURATION
SWELLING
VACANCIES