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Title: Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4703923· OSTI ID:1040921

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1040921
Report Number(s):
NREL/JA-5200-53952; JAPIAU; TRN: US201211%%257
Journal Information:
Journal of Applied Physics, Vol. 111, Issue 8; Related Information: Article No. 083704; ISSN 0021-8979
Country of Publication:
United States
Language:
English

References (13)

Advanced manufacturing concepts for crystalline silicon solar cells journal January 1999
Microstructural comparison of silicon solar cells’ front-side Ag contact and the evolution of current conduction mechanisms journal October 2011
Electron microscopy study of front-side Ag contact in crystalline Si solar cells journal March 2009
Silver thick-film contacts on highly doped n-type silicon emitters: Structural and electronic properties of the interface journal March 2003
Effect of Ag Particle Size in Thick-Film Ag Paste on the Electrical and Physical Properties of Screen Printed Contacts and Silicon Solar Cells journal January 2006
Kelvin probe force microscopy journal June 1991
Silicon pn junction imaging and characterizations using sensitivity enhanced Kelvin probe force microscopy journal June 1995
Two-Dimensional Dopant Profiling by Scanning Capacitance Microscopy journal August 1999
Screen-Printable Silver Pastes with Metallic Nano-Zinc and Nano-Zinc Alloys for Crystalline Silicon Photovoltaic Cells journal January 2011
Scanning capacitance spectroscopy on n + -p asymmetrical junctions in multicrystalline Si solar cells journal July 2011
Two-dimensional junction identification in multicrystalline silicon solar cells by scanning Kelvin probe force microscopy journal November 2008
Electronic structure of a photoluminescent center in silver-doped silicon journal June 1994
Energy levels of Zn in Si1−XGeX alloys journal October 1998