Enhanced electric conductivity at ferroelectric vortex cores in BiFeO3
- ORNL
- Pennsylvania State University
- University of Arkansas
- National Chiao Tung University, Hsinchu, Taiwan
- National Academy of Science of Ukraine, Kiev, Ukraine
- University of Twente, Enschede, Netherlands
- Ecole Centrale Paris
- University of California, Berkeley
Topological defects in ferroic materials are attracting much attention both as a playground of unique physical phenomena and for potential applications in reconfigurable electronic devices. Here, we explore electronic transport at artificially created ferroelectric vortices in BiFeO{sub 3} thin films. The creation of one-dimensional conductive channels activated at voltages as low as 1 V is demonstrated. We study the electronic as well as the static and dynamic polarization structure of several topological defects using a combination of first-principles and phase-field modelling. The modelling predicts that the core structure can undergo a reversible transformation into a metastable twist structure, extending charged domain walls segments through the film thickness. The vortex core is therefore a dynamic conductor controlled by the coupled response of polarization and electron-mobile-vacancy subsystems with external bias. This controlled creation of conductive one-dimensional channels suggests a pathway for the design and implementation of integrated oxide electronic devices based on domain patterning.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1039635
- Journal Information:
- Nature Physics, Vol. 8, Issue 1
- Country of Publication:
- United States
- Language:
- English
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