Longitudinal Resistive Charge Division in Multi-Channel Silicon Strip Sensors
Using a discrete RC network with characteristics approximating those of a high-precision silicon microstrip sensor, we have explored the use of resistive charge division to estimate the position of charge deposition in the direction parallel to the length of the sensor strips. For an electrode with distributed resistance and capacitance of 600 k{Omega} and 12.5 pF, respectively (similar to values expected for a 10 cm long resistive silicon microstrip), we estimate the fractional resolution to be {+-}6.1% of the length of the sensor. We find this value to be independent of resistance, to depend weakly on strip capacitance, and to apply for both isolated single electrodes as well as sensors with multiple parallel electrodes with significant capacitive coupling between electrodes.
- Research Organization:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 1039534
- Report Number(s):
- SLAC-REPRINT-2012-075; NIMAER; TRN: US1202163
- Journal Information:
- Nucl.Instrum.Meth.A646:118-125,2011, Vol. 646, Issue 1; ISSN 0168-9002
- Country of Publication:
- United States
- Language:
- English
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