First-Principles Study of Impurities in TlBr

Journal Article · Sat Dec 31 23:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3702574· OSTI ID:1038083

Du, Mao-Hua ^[1]

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1. ORNL

TlBr is a promising semiconductor material for room-temperature radiation detection. Material purification has been the driver for the recent improvement in the TlBr detector performance, mainly reflected by the significant increase in the carrier mobility-lifetime product. This suggests that impurities have significant impact on the carrier transport in TlBr. In this paper, first-principles calculations are used to study the properties of a number of commonly observed impurities in TlBr. The impurity-induced gap states are presented and their effects on the carrier trapping are discussed.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: NNSA USDOE - National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1038083
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 111; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
IMPURITIES
PERFORMANCE
PURIFICATION
RADIATION DETECTION
SEMICONDUCTOR MATERIALS
TRANSPORT
TRAPPING