Magnetic field effects on transport properties of PtSn4

Journal Article · Tue Jan 31 04:00:00 EST 2012 · Physical Review B: Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.85.035135· OSTI ID:1037863

Mun, Eundeok; Ko, Hyunjin; Miller, Gordon J; Samolyuk, German D; Bud'ko, Sergey L; Canfield, Paul C

The anisotropic physical properties of single crystals of orthorhombic PtSn{sub 4} are reported for magnetic fields up to 140 kOe, applied parallel and perpendicular to the crystallographic b axis. The magnetic susceptibility has an approximately temperature-independent behavior and reveals an anisotropy between the ac plane and b axis. Clear de Haas-van Alphen oscillations in fields as low as 5 kOe and at temperatures as high as 30 K were detected in magnetization isotherms. The thermoelectric power and resistivity of PtSn{sub 4} show the strong temperature and magnetic field dependencies. A change of the thermoelectric power at H=140 kOe is observed as high as ≃50 μV/K. Single crystals of PtSn{sub 4} exhibit very large transverse magnetoresistance of ≃5×10{sup 5}% for the ac plane and of ≃1.4×10{sup 5}% for the b axis resistivity at 1.8 K and 140 kOe, as well as pronounced Shubnikov de Haas oscillations. The magnetoresistance of PtSn{sub 4} appears to obey Kohler's rule in the temperature and field range measured. The Hall resistivity shows a linear temperature dependence at high temperatures followed by a sign reversal around 25 K which is consistent with thermoelectric power measurements. The observed quantum oscillations and band structure calculations indicate that PtSn{sub 4} has three-dimensional Fermi surfaces.

• Research Organization: Ames Laboratory (AMES), Ames, IA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC02-07CH11358
• OSTI ID: 1037863
• Report Number(s): IS-J 7645
• Journal Information: Physical Review B: Condensed Matter and Materials Physics, Journal Name: Physical Review B: Condensed Matter and Materials Physics Journal Issue: 3 Vol. 85; ISSN 1098-0121
• Country of Publication: United States
• Language: English

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