Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors
- ORNL
- American Superconductor Corporation, Westborough, MA
Abstract The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO cap/YSZ barrier/Y O seed on Ni-5%W metal tape. In the present work, we have identified CeO buffer layer as a potential replacement for Y O seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO (pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO phase with slightly improved out-of-plane texture compared to the texture of the underlying Ni-W substrates can be achieved in pure, undoped CeO samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO seeds using sputtering. Both sputtered CeO cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO /Ni-5W substrates. High critical currents per unit width, of 264 A/cm (critical current density, of 3.3 MA/cm ) at 77 K and 0.01 T was achieved for 0.8 m thick MOD-YBCO films grown on MOD-CeO seeds. These results indicate that CeO films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- ORNL work for others
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1037170
- Journal Information:
- IEEE Transactions on Applied Superconductivity, Journal Name: IEEE Transactions on Applied Superconductivity Journal Issue: 3 Vol. 21; ISSN 1051-8223
- Country of Publication:
- United States
- Language:
- English
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