The interaction of 193-nm excimer laser irradiation with single-crystal zinc oxide: Positive ion emission

Journal Article · Sat Dec 31 23:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3691939· OSTI ID:1037030

Kahn, E. H. ^[1]; Langford, S. C. ^[1]; Boatner, Lynn A ^[2]; Dickinson, J. T. ^[1]

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1. Washington State University
2. ORNL

We examine UV laser-induced ion emission from a wide bandgap semiconductor, single-crystal ZnO, at fluences well below both the damage threshold and plasma formation. At fluences below 200 mJ/cm2, we observe only Zn+, and the Zn+ intensity decreases monotonically during exposure. At higher fluences, after an initial decrease, the emission is sustained; in addition O+ and O2+ are observed. We explain: how Zn ions of several eV in energy can be produced on the surface of a semiconductor, how sustained emission can be maintained, and the origin of an anomalous emission of slow Zn+ ions the latter is shown to arise from photoionization of atomic Zn, also emitted by this radiation.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1037030
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 111; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CATIONS
EXCIMER LASERS
ION EMISSION
IRRADIATION
ORIGIN
PHOTOIONIZATION
PLASMA
ZINC OXIDES