Low-Temperature, Solution-Processed Molybdenum Oxide Hole-Collection Layer for Organic Photovoltaics

Hammond, Scott R.; Meyer, Jens; Widjonarko, N. Edwin; Ndione, Paul F.; Sigdel, Ajaya K.; Garcia, Andres; Miedaner, Alexander; Lloyd, Matthew T.; Kahn, Antoine; Ginley, David S.; Berry, Joseph J.; Olson, Dana C.

doi:10.1039/c2jm14911g

Title: Low-Temperature, Solution-Processed Molybdenum Oxide Hole-Collection Layer for Organic Photovoltaics

Journal Article · Tue Feb 21 00:00:00 EST 2012 · Journal of Materials Chemistry

DOI:https://doi.org/10.1039/c2jm14911g· OSTI ID:1036397

Hammond, Scott R.; Meyer, Jens; Widjonarko, N. Edwin; Ndione, Paul F.; Sigdel, Ajaya K.; Garcia, Andres; Miedaner, Alexander; Lloyd, Matthew T.; Kahn, Antoine; Ginley, David S.; Berry, Joseph J.; Olson, Dana C.

We have utilized a commercially available metal-organic precursor to develop a new, low-temperature, solution-processed molybdenum oxide (MoO{sub x}) hole-collection layer (HCL) for organic photovoltaic (OPV) devices that is compatible with high-throughput roll-to-roll manufacturing. Thermogravimetric analysis indicates complete decomposition of the metal-organic precursor by 115 C in air. Acetonitrile solutions spin-cast in a N{sub 2} atmosphere and annealed in air yield continuous thin films of MoO{sub x}. Ultraviolet, inverse, and X-ray photoemission spectroscopies confirm the formation of MoO{sub x} and, along with Kelvin probe measurements, provide detailed information about the energetics of the MoO{sub x} thin films. Incorporation of these films into conventional architecture bulk heterojunction OPV devices with poly(3-hexylthiophene) and [6,6]-phenyl-C{sub 61} butyric acid methyl ester afford comparable power conversion efficiencies to those obtained with the industry-standard material for hole injection and collection: poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). The MoO{sub x} HCL devices exhibit slightly reduced open circuit voltages and short circuit current densities with respect to the PEDOT:PSS HCL devices, likely due in part to charge recombination at Mo{sup 5+} gap states in the MoO{sub x} HCL, and demonstrate enhanced fill factors due to reduced series resistance in the MoO{sub x} HCL.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Basic Sciences, Energy Frontier Research Center; USDOE/EERE Office of Solar Energy Technologies Program

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1036397

Report Number(s):: NREL/JA-2C00-54322; JMACEP; TRN: US201206%%271

Journal Information:: Journal of Materials Chemistry, Vol. 22, Issue 7; ISSN 0959-9428

Country of Publication:: United States

Language:: English

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