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Title: Medium-range order in silicon oxycarbide glass by fluctuation electron microscopy

Abstract

Silicon oxycarbide is a metastable material that has generated interest because of the great flexibility in properties that is attainable with a mixture of divalent and tetravalent anions within the network structure. In addition to the network bonding, however, these materials have also exhibited a strong propensity to include carbon-carbon bonding-so-called ‘free carbon’-within the structure regardless of synthesis method. While evidence for the presence of free carbon is overwhelming, traditional diffraction characterization methods have been unable to definitively identify ordering or segregation in the material. Fluctuation electron microscopy (FEM) is a relatively new transmission electron microscopy technique that is specifically sensitive to medium-range order, which is ordered bonding on the length scale of roughly 8-50 A° . We utilize this method to identify semi-ordered bonding present in silicon oxycarbide thin films deposited by reactive rf sputtering over a wide composition range. These results indicate that the use of FEM can be extended to materials which are compositionally heterogeneous at the nano-scale. We show evidence of clusters approximately 1.8 nm in diameter that exhibit correlations similar to the bonding in turbostratic carbon.

Authors:
;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1035009
Report Number(s):
PNNL-SA-85357
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Physics. Condensed Matter, 19(45):Article No. 455205
Country of Publication:
United States
Language:
English

Citation Formats

Ryan, Joseph V., and Pantano, C. G.. Medium-range order in silicon oxycarbide glass by fluctuation electron microscopy. United States: N. p., 2007. Web. doi:10.1088/0953-8984/19/45/455205.
Ryan, Joseph V., & Pantano, C. G.. Medium-range order in silicon oxycarbide glass by fluctuation electron microscopy. United States. doi:10.1088/0953-8984/19/45/455205.
Ryan, Joseph V., and Pantano, C. G.. Mon . "Medium-range order in silicon oxycarbide glass by fluctuation electron microscopy". United States. doi:10.1088/0953-8984/19/45/455205.
@article{osti_1035009,
title = {Medium-range order in silicon oxycarbide glass by fluctuation electron microscopy},
author = {Ryan, Joseph V. and Pantano, C. G.},
abstractNote = {Silicon oxycarbide is a metastable material that has generated interest because of the great flexibility in properties that is attainable with a mixture of divalent and tetravalent anions within the network structure. In addition to the network bonding, however, these materials have also exhibited a strong propensity to include carbon-carbon bonding-so-called ‘free carbon’-within the structure regardless of synthesis method. While evidence for the presence of free carbon is overwhelming, traditional diffraction characterization methods have been unable to definitively identify ordering or segregation in the material. Fluctuation electron microscopy (FEM) is a relatively new transmission electron microscopy technique that is specifically sensitive to medium-range order, which is ordered bonding on the length scale of roughly 8-50 A° . We utilize this method to identify semi-ordered bonding present in silicon oxycarbide thin films deposited by reactive rf sputtering over a wide composition range. These results indicate that the use of FEM can be extended to materials which are compositionally heterogeneous at the nano-scale. We show evidence of clusters approximately 1.8 nm in diameter that exhibit correlations similar to the bonding in turbostratic carbon.},
doi = {10.1088/0953-8984/19/45/455205},
journal = {Journal of Physics. Condensed Matter, 19(45):Article No. 455205},
number = ,
volume = ,
place = {United States},
year = {Mon Mar 19 00:00:00 EDT 2007},
month = {Mon Mar 19 00:00:00 EDT 2007}
}