Surface microstructure of GeSbSe chalcogenide thin films grown at oblique angle

Journal Article · Tue Apr 24 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2717261· OSTI ID:1035008

Martin-Palma, R J; Ryan, Joseph V; Pantano, C G

Surface analysis of GeSbSe chalcogenide thin films grown at normal incidence and at four different oblique evaporation angles (45{sup o}, 75{sup o}, 80{sup o}, and 85{sup o}) was performed by a combination of scanning electron microscopy and atomic force microscopy. Additionally, quantitative roughness and microstructural analyses of the GeSbSe chalcogenide thin films were performed. Increasing roughness and surface area for increasingly oblique evaporation angle were observed, following an exponential relationship in both cases. Two-dimensional power spectral density analysis further supported the exponential behavior of the surface characteristic feature size. The notable increase of roughness and surface area with increasing evaporation oblique angle can have a significant effect on the further development of optical sensors.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1035008
• Report Number(s): PNNL-SA-85354
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CHALCOGENIDES
EVAPORATION
MICROSTRUCTURE
ROUGHNESS
SCANNING ELECTRON MICROSCOPY
SENSORS
SPECTRAL DENSITY
SURFACE AREA
THIN FILMS