Surface microstructure of GeSbSe chalcogenide thin films grown at oblique angle
Surface analysis of GeSbSe chalcogenide thin films grown at normal incidence and at four different oblique evaporation angles (45{sup o}, 75{sup o}, 80{sup o}, and 85{sup o}) was performed by a combination of scanning electron microscopy and atomic force microscopy. Additionally, quantitative roughness and microstructural analyses of the GeSbSe chalcogenide thin films were performed. Increasing roughness and surface area for increasingly oblique evaporation angle were observed, following an exponential relationship in both cases. Two-dimensional power spectral density analysis further supported the exponential behavior of the surface characteristic feature size. The notable increase of roughness and surface area with increasing evaporation oblique angle can have a significant effect on the further development of optical sensors.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1035008
- Report Number(s):
- PNNL-SA-85354
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Spectral behavior of the optical constants in the visible/near infrared of GeSbSe chalcogenide thin films grown at glancing angle
Tantalum films with well-controlled roughness grown by oblique incidence deposition