Electrophysical properties of doped (GeTe){sub 1-x}(PbSe){sub x} solid-solution alloys

Journal Article · Sat Oct 01 04:00:00 EDT 1994 · Inorganic Materials

OSTI ID:103445

Shelimova, L E; Avilov, E S; Kretova, M A ^[1]

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1. Baikov Institute of Metallurgy, Moscow (Russian Federation)

Solid-solution alloys based on germanium telluride are promising thermoelectric materials for use in the temperature range 600-900 K. At T{sub c}=700 K, Ge{sub 1-{delta}}Te ({delta}<0.02) undergoes an {alpha}{r_reversible}{beta} phase transition of the first kind from a rhombohedral (sp.gr.R3M, structure type {alpha}-As) to a cubic (sp.gr. Fm3m, NaCl-type structure) form. Anomalies in the electrophysical properties as well as volume changes in the vicinity of the {alpha}{r_reversible}{beta} phase transition have an unfavorable effect on the stability of the thermoelectric and mechanical characteristics of the alloys. Given this, it is necessary to dope Ge{sub 1-{delta}}Te with both electroinactive and electroactive species in order to bring T{sub c} beyond the working temperature range of the material and to reduce volume changes at the phase transition. In this work , the electrophysical properties of (GeTe){sub 1-x}(PbSe){sub x} solid solutions.

• OSTI ID: 103445
• Journal Information: Inorganic Materials, Journal Name: Inorganic Materials Journal Issue: 10 Vol. 30; ISSN INOMAF; ISSN 0020-1685
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH TELLURIDES
ELECTRIC CONDUCTIVITY
GERMANIUM TELLURIDES
LEAD SELENIDES
P-TYPE CONDUCTORS
PHASE TRANSFORMATIONS
SOLID SOLUTIONS
STABILITY
TEMPERATURE DEPENDENCE
THERMOELECTRIC MATERIALS