Electrophysical properties of doped (GeTe){sub 1-x}(PbSe){sub x} solid-solution alloys
- Baikov Institute of Metallurgy, Moscow (Russian Federation)
Solid-solution alloys based on germanium telluride are promising thermoelectric materials for use in the temperature range 600-900 K. At T{sub c}=700 K, Ge{sub 1-{delta}}Te ({delta}<0.02) undergoes an {alpha}{r_reversible}{beta} phase transition of the first kind from a rhombohedral (sp.gr.R3M, structure type {alpha}-As) to a cubic (sp.gr. Fm3m, NaCl-type structure) form. Anomalies in the electrophysical properties as well as volume changes in the vicinity of the {alpha}{r_reversible}{beta} phase transition have an unfavorable effect on the stability of the thermoelectric and mechanical characteristics of the alloys. Given this, it is necessary to dope Ge{sub 1-{delta}}Te with both electroinactive and electroactive species in order to bring T{sub c} beyond the working temperature range of the material and to reduce volume changes at the phase transition. In this work , the electrophysical properties of (GeTe){sub 1-x}(PbSe){sub x} solid solutions.
- OSTI ID:
- 103445
- Journal Information:
- Inorganic Materials, Vol. 30, Issue 10; Other Information: PBD: Oct 1994; TN: Translated from Neorganicheskie Materialy; 30: No. 10, 1250-1257(1994)
- Country of Publication:
- United States
- Language:
- English
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