Method of making low work function component

Robinson, Vance; Weaver, Stanton Earl; Michael, Joseph Darryl

Method of making low work function component

Patent · 15 November 2011

OSTI ID:1033222

Robinson, Vance ^[1]; Weaver, Stanton Earl ^[2]; Michael, Joseph Darryl ^[3]

Niskayuna, NY
Northville, NY
Delmar, NY

A method for fabricating a component is disclosed. The method includes: providing a member having an effective work function of an initial value, disposing a sacrificial layer on a surface of the member, disposing a first agent within the member to obtain a predetermined concentration of the agent at said surface of the member, annealing the member, and removing the sacrificial layer to expose said surface of the member, wherein said surface has a post-process effective work function that is different from the initial value.

View Patent

Research Organization:: General Electric Company (Niskayuna, NY)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-04NT42324;

Assignee:: General Electric Company (Niskayuna, NY)

Patent Number(s):: 8,058,159

Application Number:: 12/198,955

OSTI ID:: 1033222

Country of Publication:: United States

Language:: English

References (26)

Characterization and field-emission property of aligned porous carbon nanotube film by hydrogen-ion implantation Yu, W. D.; Zhang, J. H.; Wang, X. Applied Physics A, Vol. 81, Issue 1 https://doi.org/10.1007/s00339-004-2883-8	journal	June 2005
Enhancement of the field emission of carbon nanotubes straightened by application of argon ion irradiation Kim, Do-Hyung; Jang, Hoon-Sik; Kim, Chang-Duk Chemical Physics Letters, Vol. 378, Issue 3-4 https://doi.org/10.1016/S0009-2614(03)01249-1	journal	September 2003
Work function change caused by alkali ion sputtering of a sample surface Kudriavtsev, Yuriy; Asomoza, Rene Applied Surface Science, Vol. 167, Issue 1-2 https://doi.org/10.1016/S0169-4332(00)00381-0	journal	October 2000
Quantitative depth profiling at silicon/silicon oxide interfaces by means of Cs+ sputtering in negative mode by ToF-SIMS: a full spectrum approach Ferrari, S.; Perego, M.; Fanciulli, M. Applied Surface Science, Vol. 203-204 https://doi.org/10.1016/S0169-4332(02)00655-4	journal	January 2003
Characteristics of ultra-low-energy Cs+ ion beam bombardments Li, Zhanping; Hoshi, Takahiro; Oiwa, Retsu Applied Surface Science, Vol. 203-204 https://doi.org/10.1016/S0169-4332(02)00669-4	journal	January 2003
Work function change caused by alkali ion sputtering Villegas, A.; Kudriavtsev, Yu.; Godines, A. Applied Surface Science, Vol. 203-204 https://doi.org/10.1016/S0169-4332(02)00706-7	journal	January 2003
Transient effects induced through ripple topography growth during Cs+ depth profile analysis of Si at high incidence angles van der Heide, P. A. W.; Lim, M. S.; Perry, S. S. Applied Surface Science, Vol. 203-204 https://doi.org/10.1016/S0169-4332(02)00721-3	journal	January 2003
Characterization of the photoelectric effect on K+-implanted W samples Vouagner, D.; Beleznai, Cs.; Girardeau-Montaut, J. P. Applied Surface Science, Vol. 138-139 https://doi.org/10.1016/S0169-4332(98)00492-9	journal	January 1999
Factors affecting the retention of Cs+ primary ions in Si van der Heide, P. A. W.; Lupu, C.; Kutana, A. Applied Surface Science, Vol. 231-232 https://doi.org/10.1016/j.apsusc.2004.03.043	journal	June 2004
Steady-state Cs surface concentration on Si and Ge after low energy Cs+ bombardment by SIMS Chen, P.; Janssens, T.; Vandervorst, W. Applied Surface Science, Vol. 252, Issue 19 https://doi.org/10.1016/j.apsusc.2006.02.162	journal	July 2006
Modification of electrode materials for plasma torches Jankov, I. R.; Szente, R. N.; Goldman, I. D. Surface and Coatings Technology, Vol. 200, Issue 1-4 https://doi.org/10.1016/j.surfcoat.2005.02.015	journal	October 2005
Work function shifts and variations of ionization probabilities occurring during SIMS analyses using an in situ deposition of Cs0 Wirtz, T.; Migeon, H. -N Surface Science, Vol. 561, Issue 2-3 https://doi.org/10.1016/j.susc.2004.05.068	journal	July 2004
Measurement and modeling of work function changes during low energy cesium sputtering Brison, J.; Mine, N.; Poisseroux, S. Surface Science, Vol. 601, Issue 6 https://doi.org/10.1016/j.susc.2006.12.078	journal	March 2007
Enhancement of photoelectric emission sensitivity of tungsten by potassium ion implantation Girardeau‐Montaut, J. P.; Girardeau‐Montaut, C.; Afif, M. Applied Physics Letters, Vol. 66, Issue 15 https://doi.org/10.1063/1.113310	journal	April 1995
Effect of tungsten implantation on electron field emission properties of ion-beam-synthesized SiC layers Tsang, W. M.; Wong, S. P.; Lindner, J. K. N. Applied Physics Letters, Vol. 84, Issue 16 https://doi.org/10.1063/1.1705730	journal	April 2004
Catalytic oxidation of silicon by cesium ion bombardment Souzis, A. E.; Huang, H.; Carr, W. E. Journal of Applied Physics, Vol. 69, Issue 1 https://doi.org/10.1063/1.347684	journal	January 1991
Electron emission and structure properties of cesiated carbon films prepared by negative carbon ion beam Ko, Y. W.; Kim, S. I. Journal of Applied Physics, Vol. 82, Issue 5 https://doi.org/10.1063/1.366077	journal	September 1997
Irradiation effects in carbon nanostructures Banhart, Florian Reports on Progress in Physics, Vol. 62, Issue 8 https://doi.org/10.1088/0034-4885/62/8/201	journal	July 1999
Exponential scaling of sputtered negative-ion yields with transient work-function changes on Cs + -bombarded surfaces Gnaser, Hubert Physical Review B, Vol. 54, Issue 23 https://doi.org/10.1103/PhysRevB.54.16456	journal	December 1996
Work-function changes in high-dose B-implanted Si with keV Cs + bombardment Yamazaki, Hideyuki; Nakamura, Shin-ichi Physical Review B, Vol. 59, Issue 19 https://doi.org/10.1103/PhysRevB.59.12298	journal	May 1999
Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications Yuan, Jun; Woo, J. C. S. IEEE Electron Device Letters, Vol. 26, Issue 2, p. 87-89 https://doi.org/10.1109/LED.2004.841439	journal	January 2005
Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs[sup +] Musket, R. G.; Balooch, M. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, Issue 6 https://doi.org/10.1116/1.1517259	journal	January 2002
Electronic surface changes induced in silicon by hydrogen, oxygen, and cesium coverages Souzis, A. E.; Seidl, M.; Carr, W. E. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3 https://doi.org/10.1116/1.575873	journal	May 1989
History of industrial and commercial ion implantation 1906–1978 Yarling, C. B. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, Issue 4 https://doi.org/10.1116/1.582417	journal	July 2000
Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation Ranade, Pushkar; Takeuchi, Hideki; King, Tsu-Jae Electrochemical and Solid-State Letters, Vol. 4, Issue 11 https://doi.org/10.1149/1.1402497	journal	January 2001
Improvement of Field-Emission Properties of Screen Printed Carbon Nanotube Films via Argon Plasma Treatment Lee, Jung-Ah; Lee, Jin-Woo; Yoon, Dae-Sung Journal of The Electrochemical Society, Vol. 153, Issue 6 https://doi.org/10.1149/1.2186770	journal	January 2006

Similar Records

Acoustic resonator and method of making same

Patent · 1985 · OSTI ID:7146617

Systems and methods for producing low work function electrodes

Patent · 2015 · OSTI ID:1190907

Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same

Patent · 2015 · OSTI ID:1227357

Related Subjects

42 ENGINEERING

Method of making low work function component

Citation Formats

References (26)

Similar Records

Related Subjects