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Title: Pressure-induced transformations in amorphous Si-Ge alloy

Journal Article · · Phys. Rev. B

The pressure behavior of an amorphous Si-rich SiGe alloy ({alpha}-Si{sub x}Ge{sub 1-x}, x = 0.75) has been investigated up to about 30 GPa, by a combination of Raman spectroscopy, x-ray absorption spectroscopy, and x-ray diffraction measurements. The trends of microscopic structural properties and of the Raman-active phonon modes are presented in the whole pressure range. Nucleation of nanocrystalline alloy particles and metallization have been observed above 12 GPa, with a range of about 2 GPa of coexistence of amorphous and crystalline phases. Transformations from the amorphous tetrahedral, to the crystalline tetragonal ({beta}-Sn) and to the simple hexagonal structures have been observed around 13.8 and 21.8 GPa. The recovered sample upon depressurization, below about 4 GPa, shows a local structure similar to the as-deposited one. Inhomogeneities of the amorphous texture at the nanometric scale, probed by high-resolution transmission electron microscopy, indicate that the recovered amorphous sample has a different ordering at this scale, and therefore the transformations can not be considered fully reversible. The role of disordered grain boundaries at high pressure and the possible presence of a high-density amorphous phase are discussed.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
FOREIGNNSFDOE - BASIC ENERGY SCIENCES
OSTI ID:
1033004
Journal Information:
Phys. Rev. B, Vol. 85, Issue (4) ; 01, 2012; ISSN 1098-0121
Country of Publication:
United States
Language:
ENGLISH