Metal nanoplates on semiconductor substrates.

Journal Article · Tue Nov 09 04:00:00 EST 2010 · Advanced Materials (Weinheim)

DOI:https://doi.org/10.1002/adfm.201001336· OSTI ID:1031998

Sun, Y ^[1]

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1. Center for Nanoscale Materials

Growth of anisotropic metal nanostructures with well-defined shapes on large-area semiconductor substrates represents a challenge to synthesize hybrid materials with complex functionalities. This Feature Article highlights the approach recently developed in our group for growing nanoplates made of noble metals (e.g., Ag, Pd, Au/Ag alloy) on semiconductor wafers (e.g., GaAs and Si), which are widely used in the semiconductor industry. In the typical syntheses, only the semiconductor wafers and pure aqueous solutions of metal precursors are involved in the reaction. The absence of surfactant molecules, organic solvents, catalysts, etc. in the syntheses makes this strategy suitable for the formation of metal/semiconductor hybrid materials with clean metal/semiconductor interfaces. The mechanism for the selective growth of metal nanoplates on semiconductor substrates is extensively discussed. The as-grown metal nanoplates protrude out of the substrates to expose most of their surface areas to the surrounding environment, leading to be favorable for some applications, such as catalysis and surface-enhanced Raman scattering.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 1031998
• Report Number(s): ANL/CNM/JA-65630
• Journal Information: Advanced Materials (Weinheim), Journal Name: Advanced Materials (Weinheim) Journal Issue: 21 Vol. 20; ISSN ADVMEW; ISSN 0935-9648
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
AQUEOUS SOLUTIONS
CATALYSIS
CATALYSTS
NANOSTRUCTURES
ORGANIC SOLVENTS
SCATTERING
SUBSTRATES
SURFACE AREA
SURFACTANTS