Ge{sub 1-y}(Te{sub 1-x}Se{sub x}){sub y} solid solutions doped with copper
- Baikov Institute of Metallurgy, Moscow (Russian Federation)
Germanium{sub 1-y}(Tellurium{sub 1-x}Selenium{sub x}) solid solutions alloys are known to be p-type thermoelectric materials promising for use in the temperature range 600-900 K. We studied the effect of copper dopant, introduced as Cu{sub 3}Ge, on the thermoelectric properties and the {alpha}{r_reversible} {beta} transformation temperature T{sub PT} for solid-solution allows Ge{sub 1-y}(Te{sub 1-x}Se{sub x}){sub y} (0{le} {chi} {le} 0.3; {gamma} = 0.500, 0.504, and 0.510). The behavior of the electrical properties and T{sub PT} as a function of copper concentration was shown to depend on the relationship between the concentration of the copper dopant N{sub Cu} and the concentration of cation vacancies [V{sup {open_quotes}}{sub Ge}] in the host solid solution. According to the relationship between N{sub Cu} and [V{sup {open_quotes}}{sub Ge}], either of two mechanisms for Cu accommodation in the solid solutions dominates; that is, Cu atoms either occupy cation vacancies or substitute for Ge atoms.
- OSTI ID:
- 102624
- Journal Information:
- Inorganic Materials, Vol. 30, Issue 6; Other Information: PBD: Jun 1994; TN: Translated from Neorganicheskie Materialy; 30: No. 6, 757-765(1994)
- Country of Publication:
- United States
- Language:
- English
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