Incorporation of HNO{sub 3} into GaSe and InSe
- Voronezh State Univ. (Russian Federation); and others
Gallium selenide is a congruently melting compound (T{sub m}=1100 K) with a layered hexagonal crystal structure built from consecutive Se-Ga-Ga-Se slabs. These slabs are bonded by van der Waals forces. In the literature, GaSe crystals are reported to exist in several modifications, among them {epsilon}- and {gamma}-polytypes differing in layer alternation were reliably identified. GaSe is an off-stoichiometric, cation-rich phase with a homogenity range of 47.5 - 49.5 at. % Se (at T=1113 K). The {epsilon}- and {gamma}- polytypes always coexist, and the higher is the Ga content, the stronger is the structural disorder, as evidenced by broadening of lines with non-zero index l in X-ray diffraction patterns of GaSe. Irrespective of preparation conditions, GaSe is a p-type semiconductor with a band gap of 2.03 eV. A high dislocation density (10{sup 9} - 10{sup 11} cm{sup -2}), observed by TEM, is characteristic for these crystals. In many respects, InSe is similar to GaSe. InSe is a narrow-gap semiconductor with N-type conductivity. The homogeneity range of this compound is much narrower than that of GaSe, but it is likewise displaced toward metal-rich compositions. Interlayer incorporation is known to accompany a great variety of reactions, among which the reaction of HNO{sub 3} with GaSe and InSe is of great interest.
- OSTI ID:
- 102620
- Journal Information:
- Inorganic Materials, Vol. 30, Issue 6; Other Information: PBD: Jun 1994; TN: Translated from Neorganicheskie Materialy; 30: No. 6, 737-740(1994)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Synthesis and characterization of quaternary chalcogenides InSn{sub 2}Bi{sub 3}Se{sub 8} and In{sub 0.2}Sn{sub 6}Bi{sub 1.8}Se{sub 9}
Polymorphism and optical properties in [NH{sub 4}][InSe{sub 2}]