Quantum information processing : science & technology.
Conference
·
OSTI ID:1024431
Qubits demonstrated using GaAs double quantum dots (DQD). The qubit basis states are the (1) singlet and (2) triplet stationary states. Long spin decoherence times in silicon spurs translation of GaAs qubit in to silicon. In the near term the goals are: (1) Develop surface gate enhancement mode double quantum dots (MOS & strained-Si/SiGe) to demonstrate few electrons and spin read-out and to examine impurity doped quantum-dots as an alternative architecture; (2) Use mobility, C-V, ESR, quantum dot performance & modeling to feedback and improve upon processing, this includes development of atomic precision fabrication at SNL; (3) Examine integrated electronics approaches to RF-SET; (4) Use combinations of numerical packages for multi-scale simulation of quantum dot systems (NEMO3D, EMT, TCAD, SPICE); and (5) Continue micro-architecture evaluation for different device and transport architectures.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1024431
- Report Number(s):
- SAND2010-5992C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Silicon enhancement mode nanostructures for quantum computing.
Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.
Spin-orbit qubit using quantum dots
Conference
·
Sun Feb 28 23:00:00 EST 2010
·
OSTI ID:990074
Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.
Conference
·
Wed Oct 01 00:00:00 EDT 2008
·
OSTI ID:966239
Spin-orbit qubit using quantum dots
Patent
·
Mon Nov 18 23:00:00 EST 2019
·
OSTI ID:1600305