Near-field scanning microwave microscopy of few-layer graphene.
Conference
·
OSTI ID:1022994
- New Mexico Tech, Socorro. NM
- Semilab USA, Billerica, MA
Near-field microwave microscopy can be used as an alternative to atomic-force microscopy or Raman microscopy in determination of graphene thickness. We evaluated the values of AC impedance for few layer graphene. The impedance of mono and few-layer graphene at 4GHz was found predominantly active. Near-field microwave microscopy allows simultaneous imaging of location, geometry, thickness, and distribution of electrical properties of graphene without device fabrication. Our results may be useful for design of future graphene-based microwave devices.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1022994
- Report Number(s):
- SAND2010-5382C; TRN: US201118%%666
- Resource Relation:
- Conference: Proposed for presentation at the 2010 CINT User Meeting held August 9-11, 2010 in Albuquerque, NM.
- Country of Publication:
- United States
- Language:
- English
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