Near-field scanning microwave microscopy of few-layer graphene.
Conference
·
OSTI ID:1022994
- New Mexico Tech, Socorro. NM
- Semilab USA, Billerica, MA
Near-field microwave microscopy can be used as an alternative to atomic-force microscopy or Raman microscopy in determination of graphene thickness. We evaluated the values of AC impedance for few layer graphene. The impedance of mono and few-layer graphene at 4GHz was found predominantly active. Near-field microwave microscopy allows simultaneous imaging of location, geometry, thickness, and distribution of electrical properties of graphene without device fabrication. Our results may be useful for design of future graphene-based microwave devices.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1022994
- Report Number(s):
- SAND2010-5382C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Few-layer graphene characterization by near-field scanning microwave microscopy.
Quantitative imaging of graphene impedance with the near-field scanning microwave microscope.
Near-field Microwave Scanning Probe Imaging of Conductivity Inhomogeneities in CVD Graphene
Journal Article
·
Sun Jan 31 23:00:00 EST 2010
· Proposed for publication in Applied Physics Letters.
·
OSTI ID:984138
Quantitative imaging of graphene impedance with the near-field scanning microwave microscope.
Conference
·
Thu Jul 01 00:00:00 EDT 2010
·
OSTI ID:1021086
Near-field Microwave Scanning Probe Imaging of Conductivity Inhomogeneities in CVD Graphene
Journal Article
·
Sat Dec 31 23:00:00 EST 2011
· Nanotechnology
·
OSTI ID:1050361