Beam-based defect localization techniques.
Conference
·
OSTI ID:1022990
SEM and SOM techniques for IC analysis that take advantage of 'active injection' are reviewed. Active injection refers to techniques that alter the electrical characteristics of the device analyzed. All of these techniques can be performed on a standard SEM or SOM (using the proper laser wavelengths).
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1022990
- Report Number(s):
- SAND2010-5395C
- Country of Publication:
- United States
- Language:
- English
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