skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Properties of native defects in InI for potential radiation detector application

Abstract

Heavy-metal halide semiconductors have attracted much interest recently for their potential applications in radiation detection because the large atomic numbers (high Z) of their constituent elements enable efficient radiation absorption and their large band gaps allow room temperature operation. However, defect properties of these halides and their connection to carrier transport are little known. In this paper, we present first-principles calculations on native defects in InI, which is a promising material for applications in room temperature radiation detection. The important findings are: (1) anion and cation vacancies (Schottky defects) form the dominant low-energy defects that can pin the Fermi level close to midgap, leading to high resistivity that is required for a good radiation detector material; (2) the anion vacancy in InI induces a deep electron trap, which should reduce electron mobility-lifetime product in InI; (3) low diffusion barriers of vacancies could be responsible for the observed polarization phenomenon at room temperature

Authors:
 [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1022636
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 109; Journal Issue: 11; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ABSORPTION; ANIONS; ATOMIC NUMBER; CATIONS; DEFECTS; DIFFUSION BARRIERS; ELECTRONS; FERMI LEVEL; HALIDES; POLARIZATION; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; TRANSPORT; VACANCIES

Citation Formats

Biswas, Koushik, and Du, Mao-Hua. Properties of native defects in InI for potential radiation detector application. United States: N. p., 2011. Web. doi:10.1063/1.3592231.
Biswas, Koushik, & Du, Mao-Hua. Properties of native defects in InI for potential radiation detector application. United States. https://doi.org/10.1063/1.3592231
Biswas, Koushik, and Du, Mao-Hua. Sat . "Properties of native defects in InI for potential radiation detector application". United States. https://doi.org/10.1063/1.3592231.
@article{osti_1022636,
title = {Properties of native defects in InI for potential radiation detector application},
author = {Biswas, Koushik and Du, Mao-Hua},
abstractNote = {Heavy-metal halide semiconductors have attracted much interest recently for their potential applications in radiation detection because the large atomic numbers (high Z) of their constituent elements enable efficient radiation absorption and their large band gaps allow room temperature operation. However, defect properties of these halides and their connection to carrier transport are little known. In this paper, we present first-principles calculations on native defects in InI, which is a promising material for applications in room temperature radiation detection. The important findings are: (1) anion and cation vacancies (Schottky defects) form the dominant low-energy defects that can pin the Fermi level close to midgap, leading to high resistivity that is required for a good radiation detector material; (2) the anion vacancy in InI induces a deep electron trap, which should reduce electron mobility-lifetime product in InI; (3) low diffusion barriers of vacancies could be responsible for the observed polarization phenomenon at room temperature},
doi = {10.1063/1.3592231},
url = {https://www.osti.gov/biblio/1022636}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 109,
place = {United States},
year = {2011},
month = {1}
}