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Title: Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Journal Article · · Nucl.Instrum.Meth.A638:33-40,2011

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance. Full and partial 3D pixel detectors have been tested, with and without a 1.6T magnetic field, in high energy pion beams at the CERN SPS North Area in 2009. Sensors characteristics have been measured as a function of the beam incident angle and compared to a regular planar pixel device. Overall full and partial 3D devices have similar behavior. Magnetic field has no sizeable effect on 3D performances. Due to electrode inefficiency 3D devices exhibit some loss of tracking efficiency for normal incident tracks but recover full efficiency with tilted tracks. As expected due to the electric field configuration 3D sensors have little charge sharing between cells.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
1022475
Report Number(s):
SLAC-PUB-14401; arXiv:1101.4203; TRN: US201118%%190
Journal Information:
Nucl.Instrum.Meth.A638:33-40,2011, Vol. 638, Issue 1; ISSN 0168-9002
Country of Publication:
United States
Language:
English