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Title: Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

Journal Article · · J. Electrochem. Soc.
DOI:https://doi.org/10.1149/1.3609845· OSTI ID:1022044

Niobium was deposited by physical vapor deposition (PVD) using e-beam evaporation on bare (100) silicon substrates and SiO2 surfaces. The formation of niobium silicide was investigated by annealing PVD Nb films in the temperatures range 400–1000°C. At all elevated annealing temperatures the resistivity of Nb silicide is substantially higher than that of Nb. The Nb silicidation as a function of temperature has been investigated and different NbXSiy compounds have been characterized. It has been observed that the annealing of the Nb film on Si is accompanied by a strong volume expansion of about 2.5 of the resulting reacted film. The films' structural properties were studied using X-Ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM), which was not previously presented in the context of the extant NbSi literature. The X-Ray diffraction characterization of the Nb on Si sample annealed at 1000°C, showed the presence of hexagonal Nb5Si3 phases, with a dominant peak at the (200) plane, and NbSi2 phases. Fractal dimension calculations indicate a distinct transition from Stranski-Krastanov to Volmer-Weber film growth for NbSi formation at the annealing temperature of 600°C and above.

Research Organization:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
AC05-06OR23177
OSTI ID:
1022044
Report Number(s):
JLAB-ACC-11-1385; DOE/OR/23177-1726; JESOAN; TRN: US201118%%166
Journal Information:
J. Electrochem. Soc., Vol. 158, Issue 9; ISSN 0013-4651
Country of Publication:
United States
Language:
English