Quaternary Semiconductors with Positive Crystal Field Splitting: Potential High-Efficiency Spin-Polarized Electron Sources
Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V{sub 2} (II = Zn, Cd, IV = Si, Ge, Sn, and V = As) as well as II-VI ternary analogs I-III-VI{sub 2} (I = Cu, Ag, III = Al, Ga, In, and VI = Se) have not drawn wide attention because their crystal field splitting {Delta}{sub CF} near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II{sub 2}-VI{sub 4} and II-IV-III{sub 2}-V{sub 4} compounds can have coherent ground state stannite or kesterite structures with large and positive {Delta}{sub CF} due to their increased chemical and structural flexibility. We propose that ZnSiAl{sub 2}As{sub 4} and CdGeAl{sub 2}As{sub 4} in the stannite structure, and ZnSnGa{sub 2}As{sub 4} and CuAlCd{sub 2}Se{sub 4} in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1021239
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5, 2009 Vol. 95; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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