X-ray Excited Optical Luminescence from Hexagonal Boron Nitride Nanotubes: Electronic Structures and the Role of Oxygen Impurities
We report a study on the optical luminescence properties and the electronic structures of boron nitride nanotubes (BNNTs). BNNTs with natural B (80% {sup 11}B and 20% {sup 10}B) and pure {sup 10}B are investigated in comparison with hexagonal BN crystals using X-ray absorption near-edge structures (XANES) and X-ray excited optical luminescence (XEOL). We find that the BNNT specimen synthesized with natural B contains more oxide impurities than that with pure {sup 10}B, resulting in significantly different behavior in optical luminescence. All BN samples with hexagonal structures are found to emit strong luminescence, but the emission spectra are strongly morphology- and structure-dependent. XEOL and XANES measurements were carried out at the B K-edge, N K-edge, and O K-edge in order to reveal the origin of different luminescence channels and the corresponding electronic structures in these BN materials.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Organization:
- DOE - OFFICE OF SCIENCE
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1020926
- Report Number(s):
- BNL-94961-2011-JA; R&D Project: NC-001; TRN: US201116%%951
- Journal Information:
- ACS Nano, Vol. 5, Issue 1
- Country of Publication:
- United States
- Language:
- English
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