Band Alignment of Atomic Layer Deposited HfO2 on Clean and N Passivated Germanium Surfaces
Hard x-ray photoelectron spectroscopy has been used to study the band alignment between atomic layer deposited HfO{sub 2} on clean Ge (100) and nitrogen treated Ge (100) surfaces. The position of the valence-band maximum was determined by convolving theoretically calculated density of states from first-principles calculations and comparing with experimental valence-band data. Using Kraut's method, the valence-band offsets were found to be 3.2 {+-} 0.1 and 3.3 {+-} 0.1 eV for the samples grown on clean and N passivated Ge, respectively. The oxide charge measured from capacitance-voltage measurements shows a significant increase between the two samples; however, the small change in the band offset between the two systems strongly indicates negligible contribution of the interface to the conduction/valence-band barrier and the band alignment of the heterojunctions.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- DOE - OFFICE OF SCIENCE
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1020866
- Report Number(s):
- BNL-94656-2011-JA; APPLAB; R&D Project: LS001; KC0401030; TRN: US1103863
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 24; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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