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ASIC for SDD-Based X-ray Spectrometers

Journal Article · · IEEE Transactions on Nuclear Science

We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm{sup 2} and dissipates with the sensor biased about 15 mW/cm{sup 2}. As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements at -44 C show a FWHM of 145 eV at the 5.9 keV peak of a {sup 55}Fe source, and less than 80 eV on a test-pulse line at 200 eV.

Research Organization:
BROOKHAVEN NATIONAL LABORATORY (BNL)
Sponsoring Organization:
DOE - OFFICE OF SCIENCE
DOE Contract Number:
AC02-98CH10886
OSTI ID:
1020837
Report Number(s):
BNL--93926-2010-JA; KA-04
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3 Vol. 57; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

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