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The potential of vacuum microelectronics for space reactor applications

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.47164· OSTI ID:102083
 [1];  [2];  [3]
  1. Sandia National Laboratories, MS 074, Albuquerque, New Mexico 87185 (United States)
  2. Sandia National Laboratories, MS 10844, Albuquerque, New Mexico 87185 (United States)
  3. Sandia National Laboratories, MS 0527, Albuquerque, New Mexico 87185 (United States)

Matrixed field emission devices have been fabricated using a modification of standard integrated circuit fabrication techniques. The emtter-to-gate spacing is fixed by the thickness of a deposited oxide and not by photolithograpnic techniques. Functioning triodes have been fabricated using this deposited oxide spacer spproach. Measured emission current to a collector electrically and physically separated from the matrixed emission array follows Fowler-Nordheim behavior. Modeling of the potential field near the emitter and gate structures as well as the emitted electron trajectories with a two-dimensional, Poisson solver, finite-differnce code was used to evaluate and improve field emission structures. {copyright} 1995 {ital American} {ital Institute} {ital of} {ital Physics}

Research Organization:
Sandia National Laboratory
DOE Contract Number:
AC04-94AL85000
OSTI ID:
102083
Report Number(s):
CONF-950110--
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 324; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English