Room temperature photoluminescence of Ge nanostructures by high energy implantation of Ge into a buried oxide of silicon. DOE Phase 1 SBIR final report
Technical Report
·
OSTI ID:10200972
- IBIS Technology Corp., Danvers, MA (United States)
- Brown Univ., Providence, RI (United States). Div. of Engineering
- Research Organization:
- IBIS Technology Corp., Danvers, MA (United States); Epion Corp., Bedford, MA (United States); Brown Univ., Providence, RI (United States). Div. of Engineering
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-93ER81611
- OSTI ID:
- 10200972
- Type / Phase:
- SBIR
- Report Number(s):
- DOE/ER/81611-1; ON: TI96020427; BR: KM0000000
- Resource Relation:
- Other Information: PBD: 12 May 1994
- Country of Publication:
- United States
- Language:
- English
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