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The mechanical properties of single crystal {alpha}-Si{sub 3}N{sub 4}

Conference ·
OSTI ID:10193612
The ambient and high temperature mechanical properties of single crystal {alpha}{minus}Si{sub 3}N{sub 4} synthesized by chemical vapor deposition are reported. Crack patterns in the as-grown crystals and around Vicker`s indentations reveal that significant residual stresses develop during growth. Indentation studies indicate that the cleavage is essentially isotropic in {alpha}{minus}Si{sub 3}N{sub 4} at 25 C as well as at 1400 C. Transmission electron microscopy on crystals deformed at high temperatures, confirmed previous observation that high-temperature slip occurs primarily on (1011)[1120] system.
Research Organization:
Los Alamos National Lab., NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
10193612
Report Number(s):
LA-UR--93-3531; CONF-931142--3; ON: DE94002632
Country of Publication:
United States
Language:
English

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