Fabrication of sub-40-nm p-n junctions for 0.18 {mu}m MOS device applications using a cluster-tool-compatible, nanosecond thermal doping technique
In this paper, we introduced an alternative deep-submicrometer doping technology, Projection Gas Immersion Laser Doping (P-GILD). Representing the marriage of lithography and diffusion, P-GILD is a resistless, step-and-repeat doping process that utilizes excimer laser light patterned by a dielectric reticle to selectively heat and, thereby, dope regions of an integrated circuit. Results of physical and electrical characterization are presented for ultra-shallow p{sup +} {minus}n and n{sup +} {minus}p junctions produced by gas immersion laser doping (GILD), a phenomenologically identical technique that utilizes an aluminum contact mask rather than a dielectric reticle to pattern the beam. Junctions produced using GILD exhibit uniformly-doped, abrupt impurity profiles with no apparent defect formation in the silicon. Electrically, sheet and contact resistivities of the ultra-shallow junctions are less than 100{Omega}/sheet and 1 {times} 10{sup {minus}6} {Omega}{sm_bullet}cm{sup 2}, respectively, while n{sup +} {minus}p and p{sup +} {minus}n diodes exhibit nearly ideal forward bias behavior and reverse leakage current densities less than 5 nA/cm{sup 2} at {minus}5V. Uniformity of both diode characteristics and sheet resistance for junctions produced by the step-and-repeat process is also shown to be better than {plus_minus}5% across a 4-inch wafer.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 10192393
- Report Number(s):
- UCRL-JC-114003; CONF-9309264-1; ON: DE94001608
- Resource Relation:
- Conference: Society of Photo-Optical Instrumentation Engineers (SPIE) symposium on microelectronics procession,Monterey, CA (United States),27-29 Sep 1993; Other Information: PBD: 20 Sep 1993
- Country of Publication:
- United States
- Language:
- English
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