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MOCVD of gallium and calcium sulfides for improved phosphor processing

Conference ·
OSTI ID:10186919
; ; ; ; ;  [1]; ; ;  [2]
  1. Los Alamos National Lab., NM (United States)
  2. Planar Systems Inc., Beaverton, OR (United States)
Recently, doped calcium thiogallate (CaGa{sub 2}S{sub 4}) phosphors have been investigated for use in electroluminescent flat panel displays. The current technique used for the deposition of thin film calcium thiogallate is sputtering. Unfortunately, this requires a high temperature annealing process to provide the desired crystallinity of the phosphor. Recent efforts have focused on the possible use of metal-organic chemical vapor deposition (MOCVD) to produce the CaGa{sub 2}S{sub 4} layer. The use of MOCVD provides an attractive alternative to sputtering since it does not require heating above the melting temperatures of the glass substrates used for the display panels. To accomplish this, the deposition of both Ga{sub 2}S{sub 3} and CaS is investigated as these compounds are intermediate steps in the development of the phosphor deposition. Uniform, crystalline films of both Ga{sub 2}S{sub 3} and CaS were deposited and the process shows promise for successful deposition of the CaGa{sub 2}S{sub 4} phosphor.
Research Organization:
Los Alamos National Lab., NM (United States)
Sponsoring Organization:
Department of Defense, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
10186919
Report Number(s):
LA-UR--94-3179; CONF-941016--1; ON: DE95000918
Country of Publication:
United States
Language:
English