Three-terminal devices of high-{Tc} superconductors: A status report and future challenges

Conference · Thu Oct 01 04:00:00 EDT 1992

OSTI ID:10183954

Kung, Pang-Jen ^[1]

---

1. Los Alamos National Lab., NM (United States)

A study has been conducted on the recent progress of the three-terminal devices with transistor-like characteristics fabricated from the high-{Tc} superconducting materials. This study explored the operating principles and characteristics of these devices in relation to the relevant materials and techniques. A comparison of a variety of techniques for superconducting thin film deposition will be given. This study indirates that the feasibility of fabricating hybrid devices composed of semiconductors and superconductors appear to be the key issue to push forward the applications of high-{Tc} superconductors in microelectronics. The junction field-effect transistors with a semiconductor base controlled by the proximity effect are likely to be more manufacturable. The factors that influence the operating reliability of devices and the problems arising from integrating and packaging the devices will also be discussed.

• Research Organization: Los Alamos National Lab., NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 10183954
• Report Number(s): LA-UR--92-3055; CONF-920802--15; ON: DE93000654
• Country of Publication: United States
• Language: English

Related Subjects

665412
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
HIGH-TC SUPERCONDUCTORS
INTEGRATED CIRCUITS
SUPERCONDUCTING DEVICES
SUPERCONDUCTING FILMS
THIN FILMS
TRANSISTORS
USES