Observation of excitonic and band-to-band behavior in ordered InGaP{sub 2} alloys
Conference
·
OSTI ID:10183250
- Sandia National Labs., Albuquerque, NM (United States)
- National Renewable Energy Lab., Golden, CO (United States)
Photoluminescence measurements on ordered InGaP{sub 2} were studied as a function of temperature, laser power density, and magnetic field. The temperature varied between 1.4 and 300 K, the laser power densities ranged from 10 nW/cm{sup 2} to 20 W/cm{sup 2}, and the maximum magnetic field was 13.6 T. The data show both excitonic and band-to-band behavior, depending upon the incident laser power density. A consistent interpretation of all data leads to a type-II valence-band offset between the ordered domains.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10183250
- Report Number(s):
- SAND--94-2065C; CONF-9408155--4; ON: DE94018891
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360606
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201
BAND THEORY
CHEMICAL AND PHYSICOCHEMICAL PROPERTIES
ELECTRONIC STRUCTURE
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
LASER RADIATION
MAGNETIC FIELDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
POWER DENSITY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
360606
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201
BAND THEORY
CHEMICAL AND PHYSICOCHEMICAL PROPERTIES
ELECTRONIC STRUCTURE
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
LASER RADIATION
MAGNETIC FIELDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
POWER DENSITY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K