Pressure induced metallization of the Mott Insulator VI{sub 2}
- Tel Aviv Univ. (Israel)
- Los Alamos National Lab., NM (United States)
Using diamond anvil cells, {sup 129}I Moessbauer spectroscopy (MS) and resistivity measurements were carried out in the layered antiferromagnet VI{sub 2} at 0-45 GPa and 4-300 K. MS to 15 GPa revealed an impressive increase in Neel temperature and a slight increase in transferred hyperfine field. Pressure behavior of R(P,T), in particular near the metal-insulator pressure P{sub c}=44 GPa, is described. Being the lightest transition metal (TM) in the isostructural (TM)I{sub 2} series, the V{sup 2+} (d{sup 3} configuration) represents a typical candidate for a pure Mott-Hubbard gap closure. Results are compared with the heavy TM diiodides such as NiI{sub 2} and CoI{sub 2}, where it is expected that the charge transfer regime prevails. 3 figs, 10 refs.
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 10177657
- Report Number(s):
- LA-UR--93-2690; CONF-930676--31; ON: DE93018296
- Country of Publication:
- United States
- Language:
- English
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