Acceptors in ZnO nanocrystals
Zinc oxide (ZnO) has potential for a range of optoelectronic applications. In this work, we studied the defect properties of ZnO nanocrystals, grown by a solid-state pyrolytic reaction method, using IR and electron paramagnetic resonance (EPR) spectroscopy. A series of IR absorption peaks have been observed at liquid-helium temperatures. These transition lines suggest a hydrogenic acceptor with a hole binding energy of ~ 0.4 - 0.5 eV. EPR measurements in the dark showed the well-known donor line at g = 1.96, and a line at g = 2.003, which we attribute to acceptors that involve a zinc vacancy. A line at g = 2.013, only seen after exposure to light, is assigned to nonaxial zinc vacancy-hydrogen complexes. Given the current lack of suitable acceptor dopants in ZnO, vacancy complexes may provide the best route toward p-type conductivity.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1017112
- Report Number(s):
- PNNL-SA-79839; 42310; KP1704020
- Journal Information:
- Applied Physics Letters, 98(23):Article No. 232112, Journal Name: Applied Physics Letters, 98(23):Article No. 232112 Journal Issue: 23 Vol. 98; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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