Simplified models for mask roughness induced LER
The ITRS requires < 1.2nm line-edge roughness (LER) for the 22nm half-pitch node. Currently, we can consistently achieve only about 3nm LER. Further progress requires understanding the principle causes of LER. Much work has already been done on how both the resist and LER on the mask effect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and factor into LER limits. Presently, mask-roughness induced LER is studied via full 2D aerial image modeling and subsequent analysis of the resulting image. This method is time consuming and cumbersome. It is, therefore, the goal of this research to develop a useful 'rule-of-thumb' analytic model for mask roughness induced LER to expedite learning and understanding.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1016361
- Report Number(s):
- LBNL-4565E-Poster
- Country of Publication:
- United States
- Language:
- English
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