Flux pinning defects induced by electron irradiation in Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals
Conference
·
OSTI ID:10159048
- Illinois Univ., Urbana, IL (United States)
- Argonne National Lab., IL (United States)
Single crystals of R{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}}, (R=Y, Eu and Gd), have been irradiated with 0.4--1.0 MeV electrons in directions near the c-axis. An incident threshold electron energy for producing flux pinning defects has been found. In-situ TEM studies found no visible defects induced by electron irradiation. This means that point defects or small clusters ({le} 20 {Angstrom}) are responsible for the extra pinning. A consistent interpretation of the data suggests that the most likely pinning defect is the displacement of a Cu atom from the CuO{sub 2} planes.
- Research Organization:
- Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 10159048
- Report Number(s):
- ANL/CP-76499; CONF-920402-40; ON: DE92016773; CNN: Grant DMR89-20538; Grant DMR88-09854; Grant DMR90-17371
- Resource Relation:
- Conference: 1992 Material Research Society (MRS) spring meeting,San Francisco, CA (United States),27 Apr - 2 May 1992; Other Information: PBD: Jun 1992
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:10159048