Megavoltage imaging with a photoconductor based sensor
- Los Altos, CA
- Mountain View, CA
A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
- Research Organization:
- Varian Medical Systems, Inc. (Palo Alto, CA)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22800
- Assignee:
- Varian Medical Systems, Inc. (Palo Alto, CA)
- Patent Number(s):
- 7,884,438
- Application Number:
- US Patent Application 11/193,162
- OSTI ID:
- 1015316
- Country of Publication:
- United States
- Language:
- English
Systematic investigation of the signal properties of polycrystalline HgI 2 detectors under mammographic, radiographic, fluoroscopic and radiotherapy irradiation conditions
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journal | June 2005 |
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