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Title: Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Patent ·
OSTI ID:1015296

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Research Organization:
Wisconsin Alumni Research Foundation (Madison, WI)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-03ER46028
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Number(s):
7,888,583
Application Number:
US Patent Application 11/745,156
OSTI ID:
1015296
Country of Publication:
United States
Language:
English

References (14)

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Thermal conductivity of Si/SiGe superlattice nanowires journal October 2003
A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates journal January 2006
Thermoelectric properties of superlattice nanowires journal August 2003
Tight-binding modeling of thermoelectric properties of bismuth telluride journal January 2006
Reversible Thermoelectric Nanomaterials journal March 2005
Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition journal December 2005