Ultra-high current density thin-film Si diode
Patent
·
OSTI ID:1014501
- Littleton, CO
A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- Assignee:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Patent Number(s):
- 7,361,406
- Application Number:
- 10/488,902
- OSTI ID:
- 1014501
- Country of Publication:
- United States
- Language:
- English
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