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Title: 900-mW average power and tunability from a diode-pumped 2.94-{mu}m Er:YAG oscillator

Abstract

In this paper, the authors report on a diode-side-pumped Er:YAG laser that generates over 500 mW of average power at 2.94 {mu}m, and tunes over a 6 nm range centered about the 2.94-{mu}m transition. Prior to the development of the laser, diode-pumped Er:YAG lasers have been end-pumped monolithic devices that deliver {approximately}200 mW of output at 2.94 {mu}m. Much of the difficulty in obtaining higher average power from Er:YAG stems from the unfavorable lifetimes of the upper and lower laser levels, the complex state dynamics, and a low stimulated emission cross section ({sigma} {approx} 3 {times} 10{sup {minus}20} cm{sup 2}). One of the most important dynamical processes in Er:YAG is cross relaxation between neighboring Er{sup 3+} ions in the {sup 4}I{sub 13/2} level. By recycling much of the {sup 4}I{sub 13/2} population (lower laser level) into {sup 4}I{sub 11/2} (upper laser level), the cross relaxation overcomes the unfavorable lifetimes of the two levels, allowing the population inversion to be sustained. It is this cross relaxation along with thermalization of the two laser levels that allows cw oscillation on the 2.94 {mu}m line to take place. The laser that they describe here is a quasi-cw device as the approach to obtainingmore » higher average power and limited tunability relies on side pumping with a quasi-cw InGaAs laser diode array. In this way, a higher gain-length product is generated, which is necessary for extending the tuning range of the laser, and for overcoming the higher losses associated with a discreet-element resonator.« less

Authors:
; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab., CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10142432
Report Number(s):
UCRL-JC-115513; CONF-940226-6
ON: DE94009511; TRN: AHC29409%%58
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: 9. advanced solid-state lasers meeting,Salt Lake City, UT (United States),7-10 Feb 1994; Other Information: PBD: Jan 1994
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SOLID STATE LASERS; PERFORMANCE; DESIGN; TUNING; DYNAMICS; ENERGY-LEVEL TRANSITIONS; OPTICAL PUMPING; ALUMINIUM OXIDES; FERRITE GARNETS; YTTRIUM COMPOUNDS; ERBIUM IONS; SEMICONDUCTOR LASERS; 426002; LASERS AND MASERS

Citation Formats

Hamilton, C E, Beach, R J, Sutton, S B, Furu, L, and Krupke, W F. 900-mW average power and tunability from a diode-pumped 2.94-{mu}m Er:YAG oscillator. United States: N. p., 1994. Web.
Hamilton, C E, Beach, R J, Sutton, S B, Furu, L, & Krupke, W F. 900-mW average power and tunability from a diode-pumped 2.94-{mu}m Er:YAG oscillator. United States.
Hamilton, C E, Beach, R J, Sutton, S B, Furu, L, and Krupke, W F. Sat . "900-mW average power and tunability from a diode-pumped 2.94-{mu}m Er:YAG oscillator". United States. https://www.osti.gov/servlets/purl/10142432.
@article{osti_10142432,
title = {900-mW average power and tunability from a diode-pumped 2.94-{mu}m Er:YAG oscillator},
author = {Hamilton, C E and Beach, R J and Sutton, S B and Furu, L and Krupke, W F},
abstractNote = {In this paper, the authors report on a diode-side-pumped Er:YAG laser that generates over 500 mW of average power at 2.94 {mu}m, and tunes over a 6 nm range centered about the 2.94-{mu}m transition. Prior to the development of the laser, diode-pumped Er:YAG lasers have been end-pumped monolithic devices that deliver {approximately}200 mW of output at 2.94 {mu}m. Much of the difficulty in obtaining higher average power from Er:YAG stems from the unfavorable lifetimes of the upper and lower laser levels, the complex state dynamics, and a low stimulated emission cross section ({sigma} {approx} 3 {times} 10{sup {minus}20} cm{sup 2}). One of the most important dynamical processes in Er:YAG is cross relaxation between neighboring Er{sup 3+} ions in the {sup 4}I{sub 13/2} level. By recycling much of the {sup 4}I{sub 13/2} population (lower laser level) into {sup 4}I{sub 11/2} (upper laser level), the cross relaxation overcomes the unfavorable lifetimes of the two levels, allowing the population inversion to be sustained. It is this cross relaxation along with thermalization of the two laser levels that allows cw oscillation on the 2.94 {mu}m line to take place. The laser that they describe here is a quasi-cw device as the approach to obtaining higher average power and limited tunability relies on side pumping with a quasi-cw InGaAs laser diode array. In this way, a higher gain-length product is generated, which is necessary for extending the tuning range of the laser, and for overcoming the higher losses associated with a discreet-element resonator.},
doi = {},
url = {https://www.osti.gov/biblio/10142432}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

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