[Fundamental electron transfer processes at the single crystal semiconductor/liquid interface]. Progress report

Technical Report · Tue Dec 31 04:00:00 EST 1991

DOI:https://doi.org/10.2172/10123282· OSTI ID:10123282

Lewis, N S

The last year`s work has focused on several aspects of the fundamental chemistry and physics semiconductor/liquid junction behavior. These projects have been directed primarily towards GaAs/liquid contacts, because GaAs/liquid systems provide high energy conversion efficiencies and offer an opportunity to gain mechanistic understanding of the factors that are important to control in an efficient photoelectrochemical energy conversion system.

• Research Organization: California Inst. of Tech., Pasadena, CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: FG03-88ER13932
• OSTI ID: 10123282
• Report Number(s): DOE/ER/13932--T1; ON: DE92008132
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140505
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400
400500
AMINES
DYE LASERS
ELECTROCHEMISTRY
ELECTRON TRANSFER
GALLIUM ARSENIDES
INTERFACES
LIQUIDS
PASSIVATION
PHOTOCHEMICAL, PHOTOBIOLOGICAL, AND THERMOCHEMICAL CONVERSION
PHOTOCHEMISTRY
PHOTOCURRENTS
PHOTOELECTROCHEMICAL CELLS
PROGRESS REPORT
SURFACES
THIOLS