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Surface chemistry of fluorine-containing molecules related to CVD process on silicon nitride: SiF{sub 4}, XeF{sub 2}, and HF

Conference ·
OSTI ID:10121856
The reactivity of several fluorine-containing molecules on a polycrystalline silicon nitride (Si{sub 3}N{sub 4}) surface is studied under ultrahigh vacuum (UHV) conditions using temperature programmed disorption (TPD) and Auger electron spectroscopy (AES). The chemistry of fluorine of Si{sub 3}N{sub 4} is of interest in understanding the high temperature chemical vapor deposition (CVD) of Si{sub 3}N{sub 4}, which uses SiF{sub 4} as a starting material. XeF{sub 2} is reacted with a Si{sub 3}N{sub 4} surface to prepare and characterize various surface SiF{sub x} (1 {le} {times} {le} 3) species. These are identified by the chemical shift induced by the fluorine atoms in the Si (LMM) Auger peak and by changes in the TPD. Of these species, SiF{sub 2} is stable to the highest temperature. SiF{sub 2} is also formed by the reaction of SiF{sub 4} with a Si{sub 3}N{sub 4}. Because SiF{sub 2} is so stable, its decomposition is proposed as a rate-determining step in the CVD deposition of Si{sub 3}N{sub 4} from SiF{sub 4}. Gaseous HF, which is a product of the CVD process, does not dissociate on Si{sub 3}N{sub 4} and is therefore unlikely to cause the etch-like marks on the Si{sub 3}N{sub 4} coating that are observed under certain conditions. 8 refs., 6 figs.
Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-76DR00789
OSTI ID:
10121856
Report Number(s):
SAND--91-8728; CONF-911202--56; ON: DE92007508
Country of Publication:
United States
Language:
English